The electrical characteristics of nZnSe—pGe heterodiodes†
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207216808938085
Reference23 articles.
1. Trap Density Determination by Space‐Charge‐Limited Currents
2. Properties of gold in silicon
3. DONNELLY , J. P. , 1965 , Ph.D., Thesis , Carnegie Institute of Technology .
4. The capacitance of double saturation n Ge—n Si heterojunctions
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1. Modeling of Wide Bandgap Microcrystalline Silicon Carbide/Crystalline Silicon Heterojunctions;Springer Proceedings in Physics;1992
2. An analytical all-injection charge-based model for graded-base HBTs;Solid-State Electronics;1991-10
3. Effect of recombination current on current gain of HBTs;IEE Proceedings G Circuits, Devices and Systems;1991
4. A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBTs);Solid-State Electronics;1990-07
5. Study on Current Gain Degradation in Amorphous SiC Emitter HBT;Amorphous and Crystalline Silicon Carbide and Related Materials;1989
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