Analysis of the Effects of Multiply-charged Impurities in Semiconductors by the Mass Action Law†-Reference-Cited by-同舟云学术

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Analysis of the Effects of Multiply-charged Impurities in Semiconductors by the Mass Action Law†

Published:1960-02 Issue:2 Volume:8 Page:91-96
ISSN:0368-1947
Container-title:Journal of Electronics and Control
language:en
Short-container-title:Journal of Electronics and Control

Author:

SAUNDERS N. H.

Publisher

Informa UK Limited

Subject

Computer Science Applications,Control and Systems Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00207216008937255

Reference12 articles.

1. Recombinaison sur les Pièges à deux Niveaux dans les Semi-Conducteurs†

2. Studies on the recombination of electrons and holes in germanium

3. A Contribution to the Recombination Statistics of Excess Carriers in Semiconductors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoconductivity in germanium doped with gold;Journal of Applied Physics;1972-10

2. Statistics in Semiconductors with Negative Temperatures†;Journal of Electronics and Control;1963-06

3. Störtermspektroskopie mit Hilfe von Messungen der elektrischen Leitfähigkeit (II);physica status solidi (b);1961

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