Luminescence decay in glow-discharge deposited amorphous silicon

Author:

Tsang C.1,Street R. A.1

Affiliation:

1. a Xerox Palo Alto Research Center , Palo Alto , California , 94304 , U.S.A.

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Reference12 articles.

1. Anderson , D. A. Moustakas , T. D. and Paul , W. Proc. 7th International Conference, on Amorphous and Liquid Semiconductors. Edited by: Spear , W. E. pp.334Edinburgh University.

2. Engemann , D. and Fischer , R. 1974a. Amorphous and Liquid Semiconductors, Edited by: Stuke , J. and Brenig , W. 947London: Taylor & Francis Ltd. 1974b,Proc. 12th International Conference on Physics of Semiconductors, edited by Pilkuhn M. H. (Stuttgart: Teubner), p. 1042; 1976,Structure and Excitations of Amorphous Semiconductors, edited by Lucovsky G. Galeener F. (A.I.P.), p.37; 1977,Phys. Stab. Sol. (b),79, 195

3. Knights , J. C. 1976. Structure and Excitations of Amorphous Solids, Edited by: Lucovsky , G. and Galeener , F. 296A.I.P.

4. Electronic transport and state distribution in amorphous Si films

5. Photogeneration of charge carriers and recombination in amorphous semiconductors

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