The transformation of digital to analog resistance switching behavior in Bi2FeCrO6 thin films-Reference-Cited by-同舟云学术

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The transformation of digital to analog resistance switching behavior in Bi2FeCrO6 thin films

Published:2021-05-13 Issue:3 Volume:9 Page:851-857
ISSN:2187-0764
Container-title:Journal of Asian Ceramic Societies
language:en
Short-container-title:Journal of Asian Ceramic Societies

Author:

Jiang Yan-Ping¹,Zhou Hang-Lv¹,Tang Xin-Gui¹,Liu Qiu-Xiang¹,Li Wen-Hua¹,Tang Zhen-Hua¹

Affiliation:

1. School of Physics & Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, P R China

Funder

National Natural Science Foundation of China

Guangdong Provincial Natural Science Foundation of China

Science and Technology Program of Guangdong Province of China

Publisher

Informa UK Limited

Subject

Ceramics and Composites

Link

https://www.tandfonline.com/doi/pdf/10.1080/21870764.2021.1920158

Reference32 articles.

1. Nanoionics-based resistive switching memories

2. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

3. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

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1. New-Style Logic Operation and Neuromorphic Computing Enabled by Optoelectronic Artificial Synapses in an MXene/Y:HfO₂ Ferroelectric Memristor;ACS Applied Materials & Interfaces;2024-06-04

2. Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y2O3 film-based memristors;Applied Physics Letters;2023-08-21

3. Achieving adjustable digital-to-analog conversion in memristors with embedded Cs₂AgSbBr₆ nanoparticles;Nanoscale;2023

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