Electrical activation of potassium and phosphorus ions implanted in hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

Electrical activation of potassium and phosphorus ions implanted in hydrogenated amorphous silicon

Published:1993-01 Issue:1 Volume:67 Page:107-115
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Fonseca F. J.¹²,Galloni R.¹,Larsen A. Nylandsted³

Affiliation:

1. a Istituto di Chimica e Tecnologia dei Materiali e dei Componenti per ĽElettronica (LAMEL), Consiglio Nazionale delle Ricerche , Via Castagnoli, 140126 , Bologna , Italy

2. c Laboratorio de Microeletronica , Escola Politecnica, Universitade de Sao Paulo , Brazil

3. b Institute of Physics, University of Aarhus , Aarhus C , Denmark

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819308230222

Reference12 articles.

1. Hydrogen effusion: a probe for surface desorption and diffusion

2. Doping of amorphous silicon by potassium ion implantation

3. Characterized of glow-discharge deposited a-Si:H

4. Low energy ion-beam post hydrogenation of phosphor implanted amorphous silicon films

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