Thermal modification of wide-bandgap hydrogenated amorphous silicon-carbon alloy films grown by plasma-enhanced chemical vapour deposition from C2H2+SiH4 mixtures-Reference-Cited by-同舟云学术

Thermal modification of wide-bandgap hydrogenated amorphous silicon-carbon alloy films grown by plasma-enhanced chemical vapour deposition from C2H2+SiH4 mixtures

Published:1997-04 Issue:4 Volume:75 Page:485-496
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Liu Yichun¹²³,Giorgis F.⁴,Pirri C. F.⁴

Affiliation:

1. a Institute of Theoretical Physics, Northeast Normal University , Changchun , 130024 , PR China

2. b The Open Laboratory of Excited State Processes , Changchun Institute of Physics, Academia Sinica , Changchun , 130021 , PR China

3. d Advanced Science and Technology Center for Cooperative Research , Kyushu University , Kasuga Park 6-1, Fukuoka , 816 , Japan

4. c Dipartimento di Fisica , Politecnico di Torino , Duca degli Abruzzi 24, 10129 , Torino , Italy

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819708202333

Reference32 articles.

1. Akita , S. Nakayama , Y. Yamano , M. and Kawamura , R. Amorphous Silicon Technology, Materials Research Society Syniposiuni Proceedings. Edited by: Madan , A. Schiff , E. A. Thompson , M. J. Tanaka , K. and LeComber , P. G. Vol. 149, pp.167Pittsburgh, Pennsylvania: Materials Research Society.

2. Quantum well model of hydrogenated amorphous silicon

3. The amorphous Si/SiC heterojunction color-sensitive phototransistor

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