High-resolution electron microscopy study of electron-irradiation-induced crystalline-to-amorphous transition in α-SiC single crystals
Author:
Affiliation:
1. a Research Center for Ultra-High Voltage Electron Microscopy , Osaka University , Yamada-oka, Suita, Osaka , 565 , Japan
2. b Department of Metal Science and Technology , Kyoto University , Sakyo-ku, Kyoto , 606 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819208220125
Reference22 articles.
1. XCII. The reflexion of X-rays from imperfect crystals
2. Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphization
3. The process of amorphization induced by electron irradiation in alloys
4. Mosaic structure
5. Structural changes induced by helium ion irradiation in silicon carbide crystals
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