Simulation of electron-beam-induced-current profiles for thin-film heteroj unction analysis
Author:
Affiliation:
1. a Hahn-Meitner Institut, Bereich Physikalische Chemie , Glienicker Str. 100, 14109 , Berlin , Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819508239064
Reference19 articles.
1. Electron beam‐induced current in direct band‐gap semiconductors
2. Recent progress in thin-film cadmium telluride solar cells
3. A reciprocity theorem for charge collection
4. Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid Materials
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1. Determination of the minority carrier diffusion length in compositionally graded Cu(In,Ga)Se2 solar cells using electron beam induced current;Applied Physics Letters;2010-01-11
2. A comparative EBIC study of CdTe solar cell activation using CdCl2 and Cl2;Thin Solid Films;2001-05
3. An iterative algorithm for determining depth profiles of collection probability by electron-beam-induced current;Semiconductor Science and Technology;2000-12-14
4. Qualitative and Quantitative Analysis of Thin Film Heterostructures by Electron Beam Induced Current;Solid State Phenomena;1999-04
5. Determination of charge carrier collecting regions in chalcopyrite heterojunction solar cells by electron-beam-induced current measurements;Solar Energy Materials and Solar Cells;1997-12
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