Electronic states in hydrogenated microcrystalline silicon
Author:
Affiliation:
1. a Forschungszentrum Jülich , Institut für Schicht- und Ionentechnik , D-52425, Jülich , Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819808214836
Reference36 articles.
1. IR-induced transients of photoluminescence and photoconductivity in a-Si:H
2. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
3. New results of spin-lattice relaxation in a-Si:H by pulsed ESR
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