Time dependence of the low-temperature hopping photoconductivity in amorphous silicon
Author:
Affiliation:
1. a Department of Physics and Astronomy , University of Glasgow , Glasgow , G12 8QQ , Scotland
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819208204912
Reference13 articles.
1. Low-temperature electron transport near the mobility edge of amorphous silicon
2. Low temperature photoconductivity in a-Si:H films
3. Photoconductivity and photoluminescence of a-Si:H at low temperature
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A NAN-like model for the growth and steady state magnitude of photoluminescence and carrier population in amorphous semiconductors at low temperatures;Journal of Non-Crystalline Solids;1993-12
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