Oxygen enhancement of 1-54 μm Er3+luminescence in hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

Oxygen enhancement of 1-54 μm Er3+luminescence in hydrogenated amorphous silicon

Published:1998-01 Issue:1 Volume:77 Page:137-145
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Kechouane M.¹,Beldi N.¹,Mohammed-Brahim T.¹,Ľharidon H.²,Salvi M.²,Gauneau M.²,Favennec P. N.²

Affiliation:

1. a Laboratoire ‘Couches Minces et Semiconducteurs’ , Université des Sciences et de la Technologie Houari Boumedienne, Institut de Physique , BP 33, El Alia, Bab Ezzouar, 16111 , Alger , Algeria

2. b France Télécom Centre National ďEtudes des Télécommunications , 22301 , Lannion , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819808206388

Reference17 articles.

1. Beldi , N. Rahal , A. Hamouli , D. Aoucher , M. Mohammed-Brahim , T. Mencaraglia , D. Djebbour , Z. Glodt , O. Sib , J. Longeaud , C. Kleider , J. P. Chahed , L. and Bouizem , Y. Proceedings of the 11th European Photovoltaic Solar Energy Conference. Montreux. Edited by: Guimaraes , L. Palz , W. Reyff , C. D. Kiess , H. and Helm , P. pp.533

2. Clark , A. H. 1980.Polycrytalline and Amorphous Thin Film Devices, Edited by: Kamerski , L. L. 135–152. New York: Academic Press. chap. 4

3. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

4. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

5. Optical Activation of Er3+Implanted in Silicon by Oxygen Impurities

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1. Deposition temperature effects on the characteristics of a-Si:H deposited by pulsed DC magnetron sputtering;physica status solidi (a);2009-05-11

2. Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties;Materials Science Forum;2009-01

3. 1.54 μm luminescence quenching of erbium‐doped hydrogeated amorphous silicon deposited by D.C. magnetron sputtering;physica status solidi (c);2004-01-19

4. Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering;Philosophical Magazine B;1999-08

5. Resonant nonradiative energy transfer to erbium ions in amorphous hydrogenated silicon;Journal of Applied Physics;1999-07-15