Vacuum-ultraviolet-light-induced defects in hydrogenated amorphous silicon films
Author:
Affiliation:
1. a Department of Electrical and Electronic Engineeringo , Toyohashi University of Technology , Tempaku, Toyohashi , 441 , Japan
2. b Institute for Molecular Science , Myodaiji, Okazaki , 444 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819208224585
Reference24 articles.
1. Evidence for a stretched‐exponential description of optical defect generation in hydrogenated amorphous silicon
2. A SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon
3. Cody , G. D. 1984. Semiconductor and Semimetals, 21, part B, Edited by: Pankove , J. I. 23London: Academic.
4. Silicon (Si)
5. The connection between dispersive hydrogen motion and the kinetics of light-induced defects in hydrogenated amorphous silicon
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