Preparation and optical absorption spectra of a new type of artificial semiconducting material: Band-edge-modulated a-Si1-xNx:H films
Author:
Affiliation:
1. a Institute for Solid State Physics, University of Tokyo Roppongi , Minato-ku , Tokyo , 106 , Japan
2. b Department of Physics and Applied Physics , University of Strathclyde , Glasgow , G4 0NG , Scotland
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819008208629
Reference4 articles.
1. Luminescence of Amorphous Silicon Superlattices
2. High efficiency a-Si solar cells with a superlattice structure p-layer and stable a-Si solar cells with reduced SiH2 bond density
3. Optical Absorption Spectra of Band-Edge Modulated a-Si1-xNx:H Films
4. Interface defects in a-Si: H/a-Si3N4: H superlattices as elucidated from photothermal deflection spectroscopy measurements
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4. Lifetime Resolved Study of Photoluminescence under Pulsed Excitation in a-Si:H Based Films;Journal of the Physical Society of Japan;2002-02-15
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