Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon

Published:1993-05 Issue:5 Volume:67 Page:721-731
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Nebel C. E.¹,Street R. A.¹

Affiliation:

1. a Xerox Palo Alto Research Center , Palo Alto , California , 94304 , USA

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819308219319

Reference20 articles.

1. Nonlinear photocarrier drift in hydrogenated amorphous silicon-germanium alloys

2. Estimation methods for localized-state distribution profiles in undoped and phosphorous-dopeda−Si:H

3. Kocka , J. Nebel , C. E. Bauer , G. H. Klima , O. Xiao , Y. Sipek , E. and Juska , G. 1990.The Physics of Semiconductors, Edited by: Anastassakis , E. M. and Joannopoulos , J. D. 2059Singapore: World Scientific.

4. a-Si:H electron drift mobility measured under extremely high electric field

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic Transport Transition of Hydrogenated Amorphous Silicon Irradiated With Self Ions;IEEE Transactions on Nuclear Science;2013-06

2. Carrier transport in porous silicon;Semiconductors;2002-03

3. Space-charge-limited post transit currents spectroscopy in poly(methylphenylsilylene);ADV MATER OPT ELECTR;1997

4. High field transport in the inversion layer of amorphous silicon thin film transistors;Journal of Non-Crystalline Solids;1996-05

5. Instrumentation aspects and application of charge transport measurement techniques;Measurement;1996-04