Effects of the emitter conductivity on the electrical behaviour of an a-Si:H/c-Si HBT
Author:
Affiliation:
1. a Groupe de Microélectronique , Université de Rennes I , 35042, Rennes Cedex , France
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819008205537
Reference8 articles.
1. Bonnaud , O. and Viktorovitch , P. 1983. European Conference Abstracts, Session E-9;
2. Threshold switching in hydrogenated amorphous silicon
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