Low-temperature transport and recombination in a-Si: H
Author:
Affiliation:
1. a Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften , Universität Marburg , Renthof 5, F.R. Germany
2. b Institut für Solarenergieforschung , Hannover , F.R. Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819008205530
Reference20 articles.
1. Lifetime distribution of the photoluminescence of a-Si:H and a-Si1−xCx:H
2. IR-induced transients of photoluminescence and photoconductivity in a-Si:H
3. Low-temperature electron transport near the mobility edge of amorphous silicon
4. Kinetics of distant-pair recombination III. Bias illumination and frequency-resolved spectroscopy
5. A NO-STOKES SHIFT MODEL FOR THE PHOTOLUMINESCENCE OF a-Si:H
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