Effect of addition of Zn impurities on the electronic conduction in semiconducting Se80-xTe20Znx glasses-Reference-Cited by-同舟云学术

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Effect of addition of Zn impurities on the electronic conduction in semiconducting Se80-xTe20Znx glasses

Published:1995-11 Issue:5 Volume:72 Page:513-528
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Kundu R. S.¹,Bhatia K. L.¹,Kishore N.¹,Singh P.²,Vijayaraghavan C.³

Affiliation:

1. a Non-Crystalline Semiconductor Laboratory, Physics Department, Maharshi Dayanand University , Rohtak , 124001 , India

2. b Physics Department , Government College , Bhiwani , 125021 , India

3. c Physics Department , Indian Institute of Technology , New Delhi , 110016 , India

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819508239102

Reference18 articles.

1. On the glass formation tendency in (PbS)x·(M2S3)1−x (M = As, Sb)

2. Electronic conduction in Pb-modified amorphous semiconductors Pb20GexSe80-x exhibiting a p-n transition

3. Pressure-induced structural transformations in Bi-doped amorphous germanium sulfide

4. A theory of a.c. conduction in chalcogenide glasses

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive studies of dielectric behavior, resistive switching, and a.c. conduction in zinc-containing quaternary glasses of Se-Te-Sn;Journal of Non-Crystalline Solids;2023-10

2. Estimating the Switching phenomenon for Se98Te2 and Se96Te2X2 (X=Zn or Cd) Chalcogenide glasses.;Journal of Non-Crystalline Solids;2022-05

3. Estimation of the electrical and dielectric properties for Se98Te2 and Se96Te2X2 (X = Zn and Cd) chalcogenides;Journal of Materials Science: Materials in Electronics;2021-04-30

4. Dielectric investigation of In4Se96-xSx semiconductor: Relaxation and conduction mechanism;Microelectronics Reliability;2021-01

5. Electronic transport properties of (Se80Te20)100−xZnx (2 ≤ x ≤ 6) chalcogenide alloys;Physica B: Condensed Matter;2019-02

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