Affiliation:
1. EE Department, IIT Delhi New Delhi-110016, India
Abstract
There are two algorithms to generate a negative-resistance device which exhibits either a type-N shaped V-1 characteristic similar to a tunnel diode, or a type-S shaped V-1 characteristic similar to a four layered pnpn diode. We present here a selection of these circuits using bipolar, JFET or MOSFET or their combinations.
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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