Combination of optical and X-ray techniques in the study of amorphous semiconductors under high pressure: an upgrade setup for combined XAS and XRD measurements-Reference-Cited by-同舟云学术

Combination of optical and X-ray techniques in the study of amorphous semiconductors under high pressure: an upgrade setup for combined XAS and XRD measurements

Published:2010-03-01 Issue:1 Volume:30 Page:28-34
ISSN:0895-7959
Container-title:High Pressure Research
language:en
Short-container-title:High Pressure Research

Author:

Coppari F.¹,Di Cicco A.¹²³,Principi E.²,Trapananti A.²³,Pinto N.²,Polian A.¹,Chagnot S.⁴,Congeduti A.⁴

Affiliation:

1. a IMPMC-CNRS UMR 7590 , Université P. et M. Curie , 140 rue de Lourmel, 75015, Paris, France

2. b CNISM, CNR-INFM SOFT, Dipartimento di Fisica, Università di Camerino , Via Madonna delle Carceri, 62032, Camerino (MC), Italy

3. c Sincrotrone Trieste , 34012, Basovizza, Trieste, Italy

4. d Synchrotron Soleil, L'Orme des Merisiers , St. Aubin, 91192, Gif s/Yvette, France

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/08957950903549501

Reference19 articles.

1. Interplay between morphology and metallization in amorphous-amorphous transitions

2. Pressure-induced phase transitions in amorphous and metastable crystalline germanium by Raman scattering, x-ray spectroscopy, andab initiocalculations

3. Hydrogenated a ‐ Si x Ge1 − x : A Potential Solar Cell Material

4. Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma

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