Stability of reactive DC-sputtered Ir and IrO2 thin films in various ambients-Reference-Cited by-同舟云学术

Stability of reactive DC-sputtered Ir and IrO2 thin films in various ambients

Published:1997-04 Issue:1-4 Volume:16 Page:191-198
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Chen Tung-Sheng¹,Balu Venkatasubramani¹,Jiang Bo¹,Kuah Shao-Hong¹,Lee Jack C.¹,Chu Peir²,Jones Robert E.²,Zurcher Peter²,Taylor Deborah J.²,Gillespie Sherry²

Affiliation:

1. a Microelectronics Research Center, Mail Code R9950 University of Texas at Austin , TX 78712

2. b Advanced Materials , Materials Research and Strategic Technologies, Motorola, Inc. , MD K1, 3501 Ed Bluestein Blvd., Austin, Texas, 78721, U.S.A

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589708013041

Reference7 articles.

1. Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration

2. Surface and interface properties of ferroelectric BaTiO3 thin films on Si using RuO2 as an electrode

3. Electrical properties of ferroelectric thin‐film capacitors with hybrid (Pt,RuO2) electrodes for nonvolatile memory applications

4. Plasma Etching of RuO2Thin Films

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