High dielectric constant BaxSr1-xTiO3 (BST) thin films made by mocvd techniques for dram applications
Author:
Affiliation:
1. a Emcore Corporation , 394 Elizabeth Avenue, NJ, 08873, USA
2. b Dept. Elec. Computer Eng. , Rutgers University , Piscataway, NJ, 08854
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584589708012988
Reference9 articles.
1. Miyasaka , Y. and Matsubara , S. 1990. Proc. 7th Int. Symp. Application of Ferroelectrics, pp.121New York: IEEE.
2. Heteroepitaxial growth of Ba1−xSrxTiO3/YBa2Cu3O7−xby plasma‐enhanced metalorganic chemical vapor deposition
3. Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra‐large‐scale integrated dynamic random access memory application
4. Dielectric Properties of (Ba, Sr)TiO3Thin Films Deposited by RF Sputtering
5. Wessels , B. W. 1995. Novel Techniques in Sysnthesis and Processing of Advanced Materials Edited by: Shngh , J. and Cople , S. M. 221
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