Characterization of Pb(Zr,Ti)O3 thin films on SOI prepared by excimer laser deposition-Reference-Cited by-同舟云学术

Characterization of Pb(Zr,Ti)O3 thin films on SOI prepared by excimer laser deposition

Published:1995-06 Issue:1-3 Volume:9 Page:63-68
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Zheng Lirong¹,Chen Yiqing¹,Zhang Shunkai¹,Luo Weigen¹²,Lin Chenglu¹

Affiliation:

1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences , Shanghai, 200050, P.R. China

2. b Shanghai Institute of Ceramics, Chinese Academy of Sciences , Shanghai, 200050, P.R. China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589508012907

Reference9 articles.

1. Ferroelectric memories: a possible answer to the hardened nonvolatile question

2. Self biased heterojunction effect of ferroelectric thin film on silicon

3. Bondurant , D. W. 1991. 3rd International Symposium on Integrated Ferroelectrics. April3–51991, Colorado Springs. pp.364

4. Wu , S. Y. and Geideman , W. A. 1991. 3rd International Symposium on Integrated Ferroelectrics. 3–51991, Colorado Springs. pp.390

5. Optimisation of SIMOX structures formed by ion beam synthesis

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Leakage behavior and distortion of the hysteresis loop in ferroelectric thin films;Science in China Series E: Technological Sciences;1997-04

2. Flat-band voltage and breakdown in single-grained ferroelectric thin film capacitors;Integrated Ferroelectrics;1996-11

3. Drift and deformation of the hysteresis curve in thin film ferroelectric capacitors with conductance;Journal of Physics D: Applied Physics;1996-07-14

4. Vertical drift ofP–Ehysteresis loop in asymmetric ferroelectric capacitors;Journal of Applied Physics;1996-06

5. Current - voltage characteristic of asymmetric ferroelectric capacitors;Journal of Physics D: Applied Physics;1996-02-14