Effect of annealing atmosphere on the delamination of Pt layer in SiO2/Pt/PZT/Pt ferroelectric capacitor-Reference-Cited by-同舟云学术

Effect of annealing atmosphere on the delamination of Pt layer in SiO2/Pt/PZT/Pt ferroelectric capacitor

Published:1999-09 Issue:1-4 Volume:25 Page:331-340
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Park Youngsoo¹,Lee June Key¹,Jung Ilsub¹,Lee Jai-Young²

Affiliation:

1. a Electronic Materials Lab., Material and Device Sector, Samsung Advanced Institute of Technology , P.O. Box 111, Suwon , 440-600 , Korea

2. b Department of Materials Science and Engineering , Korea Advanced Institute of Science and Technology , 373-1, Yusoung-Gu , Daejon , 305-701 , Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589908210183

Reference7 articles.

1. Electrode‐induced degradation of Pb(ZrxTi1−x)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin‐film capacitors

2. Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 thin films

3. The effects of the catalytic nature of capacitor electrodes on the degradation of ferroelectric Pb(Zr,Ti)O3 thin films during reductive ambient annealing

4. Effect ofSiO2Film Deposition on the Ferroelectric Properties of aPt/Pb(Zr,Ti)O3/PtCapacitor

5. The degradation of ferroelectric properties of PZT thin films due to plasma damage

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