Effects of interfacial roughness on the leakage properties of SrTiO3 thin film capacitors
Author:
Affiliation:
1. a Texas Instruments Japan Ltd., Inashikigun , Ibaraki, 300–04, Japan
2. b Texas Instruments Incorporated , Dallas, TX, 75246, USA
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584589508013584
Reference11 articles.
1. Electric Properties of SrTiO3Thin Films Prepared by RF Sputtering
2. Epitaxial Growth of SrTiO3Films on Pt Electrodes and Their Electrical Properties
3. Current-Voltage Characteristics of Electron-Cyclotron-Resonance Sputter-DepositedSrTiO3Thin Films
4. RF Sputtered Strontium Titanate Films
5. SrTiO3Thin Film Preparation by Ion Beam Sputtering and Its Dielectric Properties
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1. Enhanced dielectric and tunable characteristics of K-doped Ba0.5Sr0.5TiO3 thin films prepared by pulsed laser deposition;Thin Solid Films;2013-01
2. Electrode Defects in Multilayer Capacitors Part I: Modeling the Effect of Electrode Roughness and Porosity on Electric Field Enhancement and Leakage Current;Journal of the American Ceramic Society;2011-08-02
3. Dielectric properties of Fe-doped Ba0.65Sr0.35TiO3 thin films fabricated by the sol–gel method;Ceramics International;2009-09
4. Justification of the Schottky emission model at the interface of a precious metal and a perovskite oxide with dilute oxygen vacancies;Thin Solid Films;2006-12
5. High-Permittivity (Ba, Sr)TiO3 thin films;Handbook of Thin Films;2002
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