Analysis of C-V and I-V data of BST thin films-Reference-Cited by-同舟云学术

Analysis of C-V and I-V data of BST thin films

Published:1997-01 Issue:1-4 Volume:14 Page:133-140
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Joshi V.¹,Dacruz C. P.¹,Cuchiaro J. D.¹,Araujo C. A.¹,Zuleeg R.²

Affiliation:

1. a Symetrix Corporation , 5055 Mark Dabling Blvd., Colorado Springs , CO , 80918

2. b Electrical Engineering, University of California , Irvine , CA, 92717

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589708019985

Reference8 articles.

1. Scott . 1992.Proceedings of ISAF356

2. Dielectric breakdown in high-ε films for ULSI DRAMs

3. Influence of surfaces on the dielectric properties and leakage currents in paraelectric (Pb0.72La0.28)TiO3 thin films

4. Electrical Properties of Paraelectric $\bf (Pb_{\bf 0.72}La_{\bf 0.28})TiO_{3}$ Thin Films with High Linear Dielectric Permittivity: Schottky and Ohmic Contacts

5. Nonlinear conduction in textured and non textured lithium niobate thin films

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