New low temperature processing of sol-gel SrBi2Ta2O9 thin films-Reference-Cited by-同舟云学术

New low temperature processing of sol-gel SrBi2Ta2O9 thin films

Published:1997-01 Issue:1-4 Volume:14 Page:123-131
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Ito Yasuyuki¹,Ushikubo Maho¹,Yokoyama Seiichi¹,Matsunaga Hironori¹,Atsuki Tsutomu²,Yonezawa Tadashi²,Ogi Katsumi²

Affiliation:

1. a Functional Devices Laboratories, Sharp Corporation , 273-1, Kashiwa, Kashiwa-shi, Chiba , 277 , JAPAN

2. b Central Research Institute, Mitsubishi Material Corporation , 1-297, Kitabukuro-cho, Omiya-shi, Saitama , 330 , JAPAN

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589708019984

Reference17 articles.

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4. Ferroelectric Memories

5. An experimental 512-bit nonvolatile memory with ferroelectric storage cell

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