Asymmetric switching and imprint in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 heterostructures-Reference-Cited by-同舟云学术

Asymmetric switching and imprint in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 heterostructures

Published:1997-09 Issue:1-4 Volume:18 Page:39-48
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Choi Chi Hong¹,Lee Jaichan¹,Park Bae Ho²,Noh Tae Won²

Affiliation:

1. a Department of Materials Engineering , Sung Kyun Kwan University , Suwon, 440-746, Korea

2. b Department of Physics and Condensed Matter Research Institute , Seoul National University , Seoul, 151-742, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589708221684

Reference10 articles.

1. Ferroelectric Memories

2. Eaton , S. S. Butler , D. B. Parris , M. Wilson , D. and Mcneillie , H. Proc. of the IEEE Inter. Solid State Conf. San Francisco, California. pp.130Piscataway, NJ: IEEE.

3. Integration of ferroelectric thin films into nonvolatile memories

4. Growth of epitaxial Pb(Zr,Ti)O3films by pulsed laser deposition

5. Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3thin film capacitors

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