Effect of ferroelectric polarization on current response of PZT thin films-Reference-Cited by-同舟云学术

Effect of ferroelectric polarization on current response of PZT thin films

Published:1995-10 Issue:1-4 Volume:10 Page:189-204
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Tagantsev A. K.¹,Kholkin A. L.¹,Colla E. L.¹,Brooks K. G.¹,Setter N.¹

Affiliation:

1. a Laboratoire de Céramique , Ecole Polytechnique Fédérale de Lausanne , CH-1015, Lausanne, Switzerland

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589508012276

Reference28 articles.

1. Moazzami , R. Hu , C. and Stepherd , W. H. 1990.Proc. Int. Rel. Phys. Symp.231

2. Electrical characteristics of ferroelectric PZT thin films for DRAM applications

3. Waser , R. and Klee , M. 1991. Proc. of the Int. Symp. on Integr. Ferroelectrics (ISIF'91). Apr.3–51991. pp.288Colorado Springs

4. Theory of conduction and breakdown in perovskite thin films

5. Waser , R. 1995.Science and Technology of Electroceramic Thin Films, NATO ASI Series Edited by: Auciello , O. and Waser , R. 223–248. Dordrecht/Boston/London: Kluwer Academic Publishers.

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