Effect of yttrium dopping on the ferroelectric fatigue and switching characteristics of Pb(Zr0.65Ti0.35)O3 thin films prepared by sol-gel processing-Reference-Cited by-同舟云学术

Effect of yttrium dopping on the ferroelectric fatigue and switching characteristics of Pb(Zr0.65Ti0.35)O3 thin films prepared by sol-gel processing

Published:1995-10 Issue:1-4 Volume:10 Page:181-188
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Kim Joon Han¹,Paik Dong Soo¹,Park Chang Yub¹,Kim Tae Song²,Yoon Seok Jin²,Kim Hyun Jai²,Jeong Hyung Jin²

Affiliation:

1. a Department of Electrical Engineering , Yonsei University , 120-749, Seoul, Korea

2. b Division of Ceramics , Korea Institute of Science & Technology , Seoul, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589508012275

Reference11 articles.

1. Ferroelectric Memories

2. Scott , J. F. Araujo , C. A. and McMillan , L. D. Proceedings of the 1989 Ultrasonic Symposium. October1989, Montreal. pp.299New York: IEEE.

3. Recent results on switching, fatigue and electrical characterization of sol-gel based PZT capacitors

4. Anomalous fatigue behavior in Zn doped PZT

5. Yoo , I. K. and Desu , S. B. 1992. Ferroelectric Thin Films II, Mater. Res. Soc. Proc., 243 Edited by: Kingon , A. I. Myers , E. R. and Tuttle , B. 323Pittsburgh

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