Pb(Zr, Ti)O3 thin film growth on yttrium-treated Si(100)-Reference-Cited by-同舟云学术

Pb(Zr, Ti)O3 thin film growth on yttrium-treated Si(100)

Published:1993-06 Issue:2 Volume:3 Page:139-145
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Wu N. J.¹,Ignatiev A.¹,Mesarwi A.¹,Shih H. D.²

Affiliation:

1. a Space Vacuum Epitaxy Center and Texas Center for Superconductivity, University of Houston , Houston, Texas, 77204-5507, USA

2. b Central Research Laboratories , Texas Instruments Incorporated , P.O. Box 655936, MS 154, Dallas, Texas, 75265, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589308216708

Reference13 articles.

1. Ferroelectric Memories

2. Ceramic Thin Films: Fabrication and Applications

3. Ferroelectric materials for 64 Mb and 256 Mb DRAMs

4. Ferroelectric Films-Growth, Properties and Applications

5. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation and characteristics of Pb(Zr,Ti)O3 field-effect transistor with a SiO2 buffer layer;Applied Physics Letters;1997-01-27

2. XPS oxygen line broadening in lead zirconium titanate and related materials;Applied Surface Science;1995-11

3. Heterostructures of Pb(ZrxTi1-x)O3and YBa2Cu3O7-δon MgO Substrate Prepared by Pulsed Laser Ablation;Japanese Journal of Applied Physics;1993-11-15