Effect of annealing conditions on alkoxy-derived PZT thin films. Microstructural and CV study-Reference-Cited by-同舟云学术

Effect of annealing conditions on alkoxy-derived PZT thin films. Microstructural and CV study

Published:1993-04 Issue:1 Volume:3 Page:33-49
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Vorotilov K. A.¹,Yanovskaya M. I.²,Dorokhova O. A.²

Affiliation:

1. a Moscow Institute of Radioengineering, Electronics and Automation , 117454 Vernadsky Prosp., 78, Moscow, Russia

2. b L. Ya. Karpov Institute of Physical Chemistry , 103064 Obukha St. 10, Russia

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589308216698

Reference18 articles.

1. Ferroelectric thin films prepared by sol-gel processing

2. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

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