Fabrication and characterization of mfsfet arrays using Al/BaMgF4/Si(111) structures-Reference-Cited by-同舟云学术

Fabrication and characterization of mfsfet arrays using Al/BaMgF4/Si(111) structures

Published:1999-11 Issue:1-4 Volume:27 Page:1-8
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Aizawa Koji¹,Ishiwara Hiroshi¹²

Affiliation:

1. a Precision and Intelligence Laboratory , 4259 Nagatsuda, Midori-ku, Yokohama, 226-8503, Japan

2. b Frontier Collaborative Research Center, Tokyo Institute of Technology , 4259 Nagatsuda, Midori-ku, Yokohama, 226-8503, Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589908228450

Reference9 articles.

1. Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory Weights

2. Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation

3. Crystal Structure of Pyroelectric Paramagnetic Barium Manganese Fluoride, BaMnF4

4. Formation of BaMgF4 Films on Pt/MgO, Si and GaAs Substrates

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1. Fabrication and characterization of ferroelectric oxide thin films;Handbook of Thin Films;2002

2. Write and Read-Out Operations of Novel 1T2C-Type Ferroelectric Memory Cells with an Array Structure;Japanese Journal of Applied Physics;2001-05-01

3. Epitaxial structure SrBi2Ta2O9<116> /SrTiO3<011> /Ce0.12Zr0.88O2<001> /Si<001> for ferroelectric-gate FET memory;Integrated Ferroelectrics;2001-01

4. Study of Bi2TI2O7-based metal-ferroelectric-semiconductor (MFS) FET;Integrated Ferroelectrics;2001-01