La doped PZT 60/40 films by MOD technology-Reference-Cited by-同舟云学术

La doped PZT 60/40 films by MOD technology

Published:1995-06 Issue:1-3 Volume:9 Page:95-104
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Zhu W.¹,Liu Z. Q.¹,Tse M. S.¹,Lu W.¹,Tan H. S.¹

Affiliation:

1. a Microelectronics Centre, School of Electrical & Electronic Engineering, Nanyang Technological University , Singapore , 2263

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589508012912

Reference15 articles.

1. Ferroelectric Memories

2. An experimental 512-bit nonvolatile memory with ferroelectric storage cell

3. Electrical characteristics of ferroelectric PZT thin films for DRAM applications

4. Films of 60/40 PZT by the mod process for memory applications

5. Ferroelectrics for non-volatile memories

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