Thermal stability of metal electrodes (Pt, Ru, & Ir) on polycrystalline silicon in ferroelectric capacitors-Reference-Cited by-同舟云学术

Thermal stability of metal electrodes (Pt, Ru, & Ir) on polycrystalline silicon in ferroelectric capacitors

Published:1997-09 Issue:1-4 Volume:17 Page:489-500
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Jeon Yoo-Chan¹,Seon Jeong-Min¹,Joo Jae-Hyun¹,Oh Ki-Young¹,Roh Jae-Sung¹,Kim Jae-Jeong¹,Kim Dae-Sik²

Affiliation:

1. a Process Group , Advanced Technology Laboratory, LG Semicon Co., Ltd. , Cheongjoo, 361-480, Korea

2. b Advanced Analytical Technology Group , ULSI Laboratory, LG Semicon Co., Ltd. , Cheongjoo, 361-480, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589708013023

Reference12 articles.

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2. Miyasaka , Y. 1995. Extended abstracts of 1995 SSDM 506–508.

3. Yamamichi , S. Lesaicherre , P. Y. Yamaguchi , H. Takemura , K. Sone , S. Yabuta , H. Sato , K. Tamura , T. Nakajima , K. Yoshida , M. Ohnishi , S. Tokashiki , K. Hayashi , Y. Kato , Y. Miyasaka , Y. Yoshida , M. and Ono , H. 1995. IEDM95 119–122.

4. Time-Dependent Leakage Current Behavior of IntegratedBa0.7Sr0.3TiO3Thin Film Capacitors during Stressing

5. Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra‐large‐scale integrated dynamic random access memory application

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