Difference in microstructure between PZT thin films on Pt/Ti and those on Pt

Author:

Hase Takashi1,Sakuma Toshiyuki1,Amanuma Kazushi1,Mori Toru1,Ochi Atsushi1,Miyasaka Yoichi1

Affiliation:

1. a NEC Corporation , Miyamae-ku, Kawasaki, 216, Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Spierings , G. A. C. M. van Zon , J. B. A. Klee , M. and Larsen , P. K. 1992. Proc. 4th International Symposium on Integrated Ferroelectrics. 1992. pp.280

2. Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactions

3. Al-Shareef , H. N. Gifford , K. D. Hren , P. D. Rou , S. H. Auciello , O. and Kingon , A. I. 1992. Proc. 4th International Symposium on Integrated Ferroelectrics. 1992. pp.181

4. Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration

5. Ferroelectric Properties of Sol-Gel Derived Pb(Zr, Ti)O3Thin Films

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