Effect of a-SiN:H Thin Film Deposited by PE/RACVD on a-Si:H Thin Film Transistor-Reference-Cited by-同舟云学术

Effect of a-SiN:H Thin Film Deposited by PE/RACVD on a-Si:H Thin Film Transistor

Published:2006-12 Issue:1 Volume:459 Page:157/[437]-165/[445]
ISSN:1542-1406
Container-title:Molecular Crystals and Liquid Crystals
language:en
Short-container-title:Molecular Crystals and Liquid Crystals

Author:

Kang Jae Wook,Park Kyung Won,Park Byung Nam,Moon Kyo Ho,Choi Sie Young,Sohn Young Soo

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://www.tandfonline.com/doi/pdf/10.1080/15421400600930136

Reference10 articles.

1. High-Mobility and High-Stability a-Si:H Thin Film Transistors with Smooth SiNx/a-Si Interface

2. Hauser , A. , Weeber , A. W. , Soppe , W. J. , Fath , P. & Bucher , E. ( 2002 ).Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE.

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