Influence of the Annealing Process for the Metal Contacts of the SiC Semiconductor Radiation Detector-Reference-Cited by-同舟云学术

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Influence of the Annealing Process for the Metal Contacts of the SiC Semiconductor Radiation Detector

Published:2008-06 Issue:sup5 Volume:45 Page:407-409
ISSN:0022-3131
Container-title:Journal of Nuclear Science and Technology
language:en
Short-container-title:Journal of Nuclear Science and Technology

Author:

Mook Kang Sang,Ho Ha Jang,Hwan Park Se,Soo Kim Han,Hoon Lee Dong,Kyun Kim Yong

Publisher

Informa UK Limited

Subject

Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/00223131.2008.10875875

Reference2 articles.

1. S. M. Cze, Physics of Semeconductor Device, second ed., Wiley, New York, 245-263(1981).

2. H. A. Bethe, MIT Radiat. Lab. Rep. 43-12(1942)

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