Precipitate recognition and recombination strength in annealed Czochralski silicon wafers-Reference-Cited by-同舟云学术

Precipitate recognition and recombination strength in annealed Czochralski silicon wafers

Published:1995-07 Issue:7 Volume:11 Page:703-706
ISSN:0267-0836
Container-title:Materials Science and Technology
language:en
Short-container-title:Materials Science and Technology

Author:

Stemmer M.¹,Vève C.¹,Gay N.¹,Martinuzzi S.¹

Affiliation:

1. Laboratoire de Photoélectricité des Semi-Conducteurs, Faculté des Sciences et Techniques de Marseille-St. Jérôme, Marseille, France.

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/17432847.1995.11948727

Reference6 articles.

1. H. BENDER and J. VANHELLEMONT: in MRS Symp. Proc. ‘Defect engineering in semiconductor growth processing and device technology’, Vol. 262, (ed. S. Ashoket al.) 15-29; 1992, Pittsburgh, PA, MRS.

2. S. M. HU: in MRS Symp. Proc. ‘Oxygen, carbon, hydrogen and nitrogen in crystalline silicon’, Vol. 59, (ed. J. C. Mikkelsen, Jret al.), 249-267; 1986, Pittsburgh, PA, MRS.

3. J. VANHELLEMONT, E. SIMOEN, G. BOSMAN, and C. CLAEYS: in ‘Semiconductor silicon’, (ed. H. R. Huffet al.), 670-683; 1994, Pennington, NJ, The Electrochemical Society.

4. Z. LACZIK, G. R. BOOKER, and R. FALSTER: in ‘Gettering and defect engineering in semiconductor technology’, (ed. M. Kittler), 395-402; 1989, Vaduz, Sci-Tech Publications.

5. M. STEMMER: PhD Thesis, University of Marseilles, France, 1994.

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