MOSFET threshold voltage modelling and parameters optimisation of new ion implant-based subthreshold device-Reference-Cited by-同舟云学术

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MOSFET threshold voltage modelling and parameters optimisation of new ion implant-based subthreshold device

Published:2020-02-18 Issue:2 Volume:9 Page:234-245
ISSN:2168-1724
Container-title:International Journal of Electronics Letters
language:en
Short-container-title:International Journal of Electronics Letters

Author:

Hossain Munem¹,Chowdhury Masud H.¹

Affiliation:

1. Computer Science & Electrical Engineering Department, University of Missouri-Kansas City, Kansas City, MO, USA

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/21681724.2020.1726474

Reference15 articles.

1. A high-order curvature compensation technique for bandgap voltage reference using subthreshold MOSFETs

2. A simple subthreshold swing model for short channel MOSFETs

3. Transistor doping profile optimization for low power subthreshold circuits

4. New three dimensional doping profile for devices in subthreshold circuit

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