A monolithic low phase noise power oscillator using 0.35 um GaN/Al0.27Ga0.73N MMIC process-Reference-Cited by-同舟云学术

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A monolithic low phase noise power oscillator using 0.35 um GaN/Al0.27Ga0.73N MMIC process

Published:2015-05-21 Issue:3 Volume:4 Page:313-322
ISSN:2168-1724
Container-title:International Journal of Electronics Letters
language:en
Short-container-title:International Journal of Electronics Letters

Author:

Gu Liming,Che Wenquan,Yang Yang,Huang Fan-Hsiu,Chiu Hsien-Chin

Funder

National Natural Science Foundation of China

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/21681724.2015.1036794

Reference12 articles.

1. Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

2. A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

3. High Efficiency RF and Microwave Solid State Power Amplifiers

4. Class E Colpitts oscillator for low power wireless applications

5. Modeling GaN: Powerful but Challenging

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Power Amplifier and Oscillator Design for Wireless Power Transmission;Microwave Sleep Apnoea Monitoring;2017-12-22

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