Dielectric properties of the 250 K phase transition in BaMnF4 and of CsH2PO4 and CsD2PO4
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150197608236705
Reference10 articles.
1. Raman study of soft zone-boundary phonons and antiferrodistortive phase transition in BaMnF4
2. Model for ferroelectric Gd2(MoO4)3
3. BARIUM MANGANESE FLUORIDE, A NEW CRYSTAL FOR MICROWAVE ULTRASONICS
4. Ultrasonic velocity measurements near the 250°K phase transition in BaMnF4
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