Ferroelectwc-semiconductor devices
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150197808236788
Reference13 articles.
1. Wu, S. Y. 1974.IEEE Trans, 499Electron Devices.
2. Moll, J. L. and Tarui, Y. 1963.IEEE Trans-Electron Devices328
3. Effect of ferroelectric polarization on insulated-gate thin-film transistor parameters
4. A ferroelectric field effect device
5. Perlman, S. S. and Ludwig, K. H. 1967.IEEE Trans, 816Electron Devices.
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