Thermoelectric properties of new Bi-chalcogenide layered compounds

Author:

Mizuguchi Yoshikazu1,Nishida Atsuhiro1,Omachi Atsushi1,Miura Osuke1

Affiliation:

1. Department of Electrical and Electronic EngineeringTokyo Metropolitan University 1-1, Minami-osawa Hachioji 192-0397 Japan

Funder

Japan Society for the Promotion of Science

Publisher

Informa UK Limited

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference56 articles.

1. CsBi4Te6: A high-performance thermoelectric material for low-temperature applications;Chung;Science,2000

2. BiS2-based superconductivity in F-substituted NdOBiS2;Demura;Journal of the Physical Society of Japan,2013

3. An oxide single crystal with high thermoelectric performance in air;Funahashi;Japanese Journal of Applied Physics,2000

4. Electrical and thermal transport of layered bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K;Goto;Journal of the Physical Society of Japan,2015

5. Effect of quantum-well structures on the thermoelectric figure of merit;Hicks;Physical Review B,1993

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