Enhancement of Multisubband Electron Mobility in Barrier Delta-Doped Asymmetric GaAs/AlGaAs Double Quantum Well Structure
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/02564602.2015.1043150
Reference19 articles.
1. Electron localization in an asymmetric double quantum well nanostructure
2. Oriented polaritons in strongly-coupled asymmetric double quantum well microcavities
3. Optimized Asymmetric Double Quantum Well for High Electric-Field-Sensitivity Electroabsorption: Excitonic Mixing Effects
4. Intersubband electro-absorption and retardation in coupled quantum wells: the role of interface scattering
5. Tunnelling and relaxation in semiconductor double quantum wells
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1. Multiple Changes in the Electron-Phonon Interaction in Quantum Wells with Dielectrically Different Barriers;Semiconductors;2023-02
2. Optical absorption coefficient in n-type double δ-doped layers GaAs quantum wells;International Journal of Modern Physics B;2019-07-30
3. Improved two-dimensional electron mobility in asymmetric barrier delta-doped GaAs/AlGaAs modulation-doped field-effect transistor structures;Japanese Journal of Applied Physics;2017-02-03
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