Origin of the non-exponential photocurrent decay in amorphous semiconductors
Author:
Affiliation:
1. a Department of Electronics, Faculty of Engineering , Gifu University , Gifu , 501-11 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818608239029
Reference50 articles.
1. Density of States in the Gap of Tetrahedrally Bonded Amorphous Semiconductors
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5. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy
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