Temperature-dependent effects in field-effect measurements on hydrogenated amorphous silicon thin-film transistors-Reference-Cited by-同舟云学术

Temperature-dependent effects in field-effect measurements on hydrogenated amorphous silicon thin-film transistors

Published:1988-10 Issue:4 Volume:58 Page:389-410
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Schumacher R.¹,Thomas P.¹,Weber K.¹,Fuhs W.¹,Djamdji F.²,Le Comber P. G.²,Schropp R. E. I.³⁴

Affiliation:

1. a Fachbereich Physik, Philipps Universität Marburg , Renthof 5, 3550 Marburg, F.R. , Germany

2. b Carnegie Laboratory of Physics , University of Dundee , Dundee , DD1 4HN , Scotland

3. c Department of Applied Physics , Groningen State University , Nijenborg 18, 9747 AG Groningen, Netherlands

4. d Glasstech Solar, Inc. (GSI) , 12441 West 49th Avenue, Wheatridge , Colorado , 80033 , U.S.A.

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818808218382

Reference33 articles.

1. Beyer , W. and Overhof , H. 1984. Semiconductors and Semimetals, Edited by: Willardson , R. K. and Beer , A. C. Vol. 21C, 258New York: Academic Press.

2. Carlson , D. E. and Wronski , C. R. 1979. Amorphous Semiconductors, Edited by: Brodsky , M. H. 298New York: Springer-Verlag.

3. Theoretical approaches to the interpretation of transport and optical data of amorphous semiconductors

4. Localization Effects in Amorphous Semiconductors

5. An investigation of the conductivity prefactor in a-Si as a function of Fermi level position using the field-effect experiment

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