Triplet exciton recombination in a-Si: H as elucidated by optically detected magnetic resonance experiments
Author:
Affiliation:
1. a Institute for Solid State Physics, University of Tokyo , Roppongi , Tokyo , 106 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818608239004
Reference7 articles.
1. O.D.M.R. investigation of recombination processes in a-Six C1-x:H
2. Recombination mechanisms in amorphous semiconductors deduced from resonance measurements
3. Gap States in Hydrogenated Amorphous Silicon: The Trapped Hole Centres (The a Centres)
4. Subnanosecond radiative and nonradiative processes ina-Si: H
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spin-dependent processes in amorphous and microcrystalline silicon: a survey;Journal of Non-Crystalline Solids;2000-05
2. Time-Resolved Optically Detected Magnetic Resonance Experiment on Conduction Band Tail Electrons andACentres in Hydrogenated Amorphous Silicon;Journal of the Physical Society of Japan;1988-11-15
3. Triplet exciton recombination in silicon-based amorphous semiconductors;Journal of Non-Crystalline Solids;1987-12
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