Amorphous silicon superlattices prepared by direct photochemical deposition
Author:
Affiliation:
1. a Department of Electrical Engineering , Hiroshima University , Higashi-Hiroshima , 724 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818908228811
Reference22 articles.
1. Amorphous Semiconductor Superlattices
2. Resonant tunneling in semiconductor double barriers
3. The temperature dependence of photoluminescence in a-Si: H alloys
4. Determination of Band Discontinuity in Amorphous Silicon Heterojunctions
5. Properties of amorphous semiconductinga−Si:Ha−SiNx:Hmultilayer films and ofa−SiNx:Halloys
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