Thermal oxidation of silicides on silicon-Reference-Cited by-同舟云学术

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Thermal oxidation of silicides on silicon

Published:1987-01 Issue:2 Volume:55 Page:291-308
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

d'Heurle F. M.¹,Cros A.²,Frampton R. D.³,Irene E. A.³

Affiliation:

1. a I.B.M. Research Center , P.O. Box 218, Yorktown Heights , New York , 10598 , U.S.A.

2. b UA CNRS 783, Département de Physique des Solides, Faculté des Sciences de Luminy , 13288 , Marseille , France

3. c Department of Chemistry , The University of North Carolina , Chapel Hill , North Carolina , 27514 , U.S.A.

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818708211210

Reference80 articles.

1. Interaction of oxygen with silicon d‐metal interfaces: A photoemission investigation

2. Adda , Y. and Philibert , J. 1966. La Diffusion duns les Solides, 52–309. Paris: Presses Universitaires de France.

3. An interface — marker technique applied to the study of metal silicide growth

4. An alternative marker experiment in the formation of Mo and W silicides

5. Thermal oxidation of transition metal silicides: The role of mass transport

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