Tuning correlation and localization lengths with high magnetic fields near the metal-insulator transition
Author:
Affiliation:
1. a Department of Physics and Astronomy , University of Rochester , Rochester , New York , 14627 , U.S.A.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818708215315
Reference61 articles.
1. Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions
2. Electrical conduction in heavily doped germanium
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4. Magnetic field-induced metal-insulator transition in InP: new result at very low temperatures
5. Tuning the Metal-Insulator Transition in N-Type Silicon with a Magnetic Field
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1. Strain-Induced MI Transition in n-Si and n-Ge: Physical Mechanisms and Transport Phenomena;physica status solidi (b);2001-01
2. Reflectance of conducting polypyrrole: Observation of the metal-insulator transition driven by disorder;Physical Review B;1995-08-15
3. High Field Positive Magnetoresistance in the Variable Range Hopping Regime in n-Type CuInSe2;physica status solidi (b);1995-05-01
4. Localization: theory and experiment;Reports on Progress in Physics;1993-12-01
5. Anderson Transition in Three-Dimensional Systems in Strong Magnetic Fields;Journal of the Physical Society of Japan;1993-01-15
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